Part number:
P123
Manufacturer:
Polyfet RF Devices
File Size:
38.89 KB
Description:
Patented gold metallized silicon gate enhancement mode rf power vdmos transistor.
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM P123 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 2 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R
P123
Polyfet RF Devices
38.89 KB
Patented gold metallized silicon gate enhancement mode rf power vdmos transistor.
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