Part number:
P122
Manufacturer:
Polyfet RF Devices
File Size:
43.64 KB
Description:
Patented gold metallized silicon gate enhancement mode rf power vdmos transistor.
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 1.0 Watts Single Ended Package Style SOT 223 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSO
P122
Polyfet RF Devices
43.64 KB
Patented gold metallized silicon gate enhancement mode rf power vdmos transistor.
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