P122 PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

Description

polyfet rf devices P122 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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Datasheet Specifications

Part number: P122
Manufacturer: Polyfet RF Devices
File Size: 43.64 KB
Datasheet: P122_PolyfetRFDevices.pdf
Description: PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 1.0 Watts Single Ended Package Style SOT 223 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSO

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P122 PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

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