P1210BVA Datasheet - UNIKC

P1210BVA N-Channel MOSFET

P1210BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 12mΩ @VGS = 10V ID 8.7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 8.7 6.9 32 Avalanche Current IAS 15 Avalanche Energy L = 1mH EAS 112 Power Dissipation TA= 25 °C TA =70 °C PD 2 1.3 Junction &.

P1210BVA-UNIKC.pdf