P1203BE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 9A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 36 Continuous Drain Current TC = 100 °C TA = 25 °C ID 22 9 Pulsed Drain Current1 TA = 70 °C IDM 7 108 Avalanche Current IAS 28 Avalanche Energy L = 0.1mH EAS 39 TC = 25 °C 25 Power Dissip.
