P1203ED Datasheet - UNIKC

P1203ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -52A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -52 -33 -150 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS -44 97 Power Dissipation TC = 25 °C TC = 100 °C PD 49 19