P1203EVG Datasheet - UNIKC

P1203EVG P-Channel MOSFET

P1203EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -12A SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS -30 V VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -12 -9 A -50 Avalanche Current IAS -43 Avalanche Energy L = 0.1mH EAS 94 mJ Power Dissipation TA =.

P1203EVG Datasheet (325.74 KB)