P1203BD Datasheet - UNIKC

P1203BD MOSFET

P1203BD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 12mΩ @VGS = 10V 48A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID 48 TC = 100 °C 30 IDM 144 Avalanche Current IAS 28 Avalanche Energy L = 0.1mH EAS 40 Power Dissipation TC = 25 °C PD 44 TC = 100 °C 17 Operating Juncti.

P1203BD Datasheet (402.44 KB)