P1203BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 35A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 35 Continuous Drain Current TC = 100 °C TA = 25 °C ID 22 12 Pulsed Drain Current1 TA = 70 °C IDM 10 95 Avalanche Current IAS 28 Avalanche Energy L = 0.1mH EAS 39 TC = 25 °C 25 Power Dis.
