gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1210 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE.

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and other.

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal f.

F1212D-1W

F1212M-1W

F1212N-1W

F1212S-1W

F1212S-2WR2

F1214

F1215D-1W

F1215M-1W

F1215N-1W

F1215S-1W

F1215S-2WR2

F12-25R12KT4G

F1200A