PDB0854S mosfet equivalent, dual n-channel mosfet.
* 100V,1.2A, RDS(ON) =390mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
DFN2X2 Dual 2EP Pin Configuration
D1 G2
˙ S.
BVDSS 100V
RDSON 390m
ID 1.2A
Features
* 100V,1.2A, RDS(ON) =390mΩ @VGS = 10V
* Improved dv/dt capability .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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