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PDB3810H - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed D2.
  • Halogen free.

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Datasheet Details

Part number PDB3810H
Manufacturer Potens semiconductor
File Size 829.33 KB
Description N-Channel MOSFET
Datasheet download datasheet PDB3810H Datasheet

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Full PDF Text Transcription

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30V N-Channel MOSFETs PDB3810H General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Q1 Q2 DFN3x3 Asymmetric Dual Pin Configuration S2 S2 S2 G2 D1 G2 S2 S2 S2 G1D1 D1D1 S1/D2 D1 G1 D1 D1 D1 G1 G2 S1 BVDSS 30V 30V RDSON 10.5m 10.5m ID 19.5A 19.
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