PDC0810T Key Features
- 100V,10A, RDS(ON) =185mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- Part: PDC0810T
- Manufacturer: Potens semiconductor
- Size: 927.86 KB
Related Potens semiconductor Datasheets
| Part Number | Description |
|---|---|
| PDC0810V | Dual N-Channel MOSFETs |
| PDC0854T | Dual N-Channel MOSFETs |
| PDC0854V | Dual N-Channel MOSFET |
| PDC02N60T | N-Channel MOSFETs |
| PDC03N50T | N-Channel MOSFETs |
PDC0810T Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.