PDC39F2BX - 30V N-Channel MOSFET

Product Overview

Potens semiconductor

Datasheet Details

Part number	PDC39F2BX
Manufacturer	Potens semiconductor
File Size	958.76 KB
Description	30V N-Channel MOSFET
Datasheet	PDC39F2BX Datasheet
Additional preview pages of the PDC39F2BX datasheet.

Product details

Description

These N-Channel enhancement mode power field effect BVDSS RDSON ID transistors are using trench DMOS technology.This 30V 2.95m 120A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the t avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications.ee PPAK5X6 Pin Configuration h D s D D D D D D DD ata S S S G G GS S S S Featu

Features

30V,120A, RDS(ON) =2.95mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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Published: Jan 7, 2024 |