PDC4964Z - N-Channel MOSFET

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

40V, 54A, RDS(ON) =6.5mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
Green Device Available.

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PDC4964Z n-channel mosfet by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDC4964Z
Manufacturer	Potens semiconductor
File Size	762.89 KB
Description	N-Channel MOSFET
Datasheet	PDC4964Z Datasheet

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Preliminary datasheet 40V N-Channel MOSFETs PDC4964Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3x3 Pin Configuration DDD D S S SG G D S BVDSS 40V RDSON 6.5m ID 54A Features  40V, 54A, RDS(ON) =6.