PDD6974-5 Datasheet, Potens semiconductor

* 65V,95A, RDS(ON) =3.3mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Ne.

TO252 Pin Configuration D D SG G S BVDSS 65V RDSON 3.3m ID 95A Features
* 65V,95A, RDS(ON) =3.3mΩ@VGS = 10V.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.