PDD6902 Datasheet | Potens semiconductor

60V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D SG G BVDSS 60V RDSON 4.5m ID 90A Features - 60V,90A, RDS(ON) =4.5mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - Green Device Available Applications - PowerTools - Quick Charger - LED applications - Motor Drive...