Datasheet4U Logo Datasheet4U.com

PDD6902 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 60V,90A, RDS(ON) =4.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

📥 Download Datasheet

Datasheet preview – PDD6902

Datasheet Details

Part number PDD6902
Manufacturer Potens semiconductor
File Size 752.19 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDD6902 Datasheet
Additional preview pages of the PDD6902 datasheet.

📁 Similar Datasheet

Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
60V N-Channel MOSFETs PDD6902 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D SG G S BVDSS 60V RDSON 4.5m ID 90A Features  60V,90A, RDS(ON) =4.
Published: |