Potens semiconductor PDD6905
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.GENERAL DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. TO252 Pin Configuration D G S G D S BVDSS -60V RDSON 48m ID -16AFEATURES
● -60V, -16A, RDS(ON) =48mΩ@VGS = -10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● Motor Drive● Power Tools
● LED Lighting
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Ener