PDEB2310L
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 20V,9.9A, RDS(ON) =13mΩ @VGS = 4.5V
- Improved dv/dt capability
- ESD Protection Diode Embedded
- Green Device Available
