PDEB2310Y
Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 20V,11A, RDS(ON) =10mΩ @VGS = 10V
- Improved dv/dt capability
- ESD Protection Diode Embedded
- Green Device Available
