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PDEC3907W - P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-8.5A, RDS(ON) =23mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number PDEC3907W
Manufacturer Potens semiconductor
File Size 622.35 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDEC3907W Datasheet

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Full PDF Text Transcription

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30V P-Channel MOSFETs PDEC3907W General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK2x3 Pin Configuration DDDS D D DG G D S BVDSS -30V RDSON 23m ID -8.5A Features  -30V,-8.5A, RDS(ON) =23mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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