PDEC2209K Datasheet | Potens semiconductor

Preliminary datasheet 20V P-Channel Dual MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3x3 Dual NEP Pin Configuration D1 D1D2 D2 S1G1S2G2 G1 D1 G2 D2 BVDSS RDSON -20V 33m -5.6A Features - -20V,-5.6A, RDS(ON) =33mΩ @VGS = -4.5V - Improved dv/dt capability - Fast switching - Green Device Available Applications...