PDEC3907Z - P-Channel MOSFET

Potens semiconductor

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-30V,-30A, RDS(ON) =20mΩ@VGS = -10V.
Fast switching.
Green Device Available.
Suit for -4.5V Gate Drive.

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PDEC3907Z p-channel mosfet by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDEC3907Z
Manufacturer	Potens semiconductor
File Size	467.72 KB
Description	P-Channel MOSFET
Datasheet	PDEC3907Z Datasheet

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30V P-Channel MOSFETs PDEC3907Z General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3x3 Pin Configuration DDDD S S SG G D BVDSS -30V RDSON 20m ID -30A Features  -30V,-30A, RDS(ON) =20mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.