* -30V,-30A, RDS(ON) =20mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications
* ESD Protection Embedded Ap.

PPAK3x3 Pin Configuration DDDD S S SG G D BVDSS -30V RDSON 20m ID -30A Features
* -30V,-30A, RDS(ON) =20mΩ.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDEC3907W

PDEC3908Z

PDEC3096X

PDEC3098X

PDEC2209K

PDEC2210K

PDEC2210V

PDEC2310Z

PDEB2310Y

PDEB3907Z

PDED3096

PDED3098

PDEJ2210Z