PDEV2120Y mosfets equivalent, dual p+n channel mosfets.
* Fast switching
* Green Device Available
* Suit for 1.5V Gate Drive Applications
D1 G2 S2
S1 G1 D2
D1 D2
Applications
G1 G2 S1 S2
* Notebook
* L.
SOT563 Dual Pin Configuration
BVDSS 20V -20V
RDSON 300m 600m
ID 800mA -400mA
Features
* Fast switching
* .
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high.
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