PDEV2220Y datasheet by Potens semiconductor.
| Part number | PDEV2220Y |
|---|---|
| Datasheet | PDEV2220Y-Potenssemiconductor.pdf |
| File Size | 599.19 KB |
| Manufacturer | Potens semiconductor |
| Description | Dual N-Channel MOSFETs |
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These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
View all Potens semiconductor datasheets
| Part Number | Description |
|---|---|
| PDEV2220V | Dual N-Channel MOSFETs |
| PDEV2220Z | Dual N-Channel MOSFETs |
| PDEV2219Y | Dual P-Channel MOSFETs |
| PDEV2219Z | Dual P-Channel MOSFETs |
| PDEV2120Y | Dual P+N Channel MOSFETs |
| PDEV2120Z | Dual P+N Channel MOSFETs |
| PDEB2310Y | N-Channel MOSFET |
| PDEB3907Z | P-Channel MOSFET |
| PDEC2209K | P-Channel MOSFET |
| PDEC2210K | N-Channel MOSFET |
