PDF6974-5 Datasheet, Potens semiconductor

* 65V,80A, RDS(ON) =2.8mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications GDS G .

TO220F Pin Configuration D BVDSS 65V RDSON 2.8m ID 80A Features
* 65V,80A, RDS(ON) =2.8mΩ@VGS = 10V
* Im.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.