PDL6910 mosfets equivalent, n-channel mosfets.
* 60V,6.8A, RDS(ON) =60mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Mot.
SOT223 Pin Configuration D
D
S D G
G
S
BVDSS 60V
RDSON 60m
ID 6.8A
Features
* 60V,6.8A, RDS(ON) =60mΩ@VGS.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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