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PDS4810 - Dual N-Channel MOSFETs

Datasheet Details

Part number PDS4810
Manufacturer Potens semiconductor
File Size 581.00 KB
Description Dual N-Channel MOSFETs
Datasheet download datasheet PDS4810 Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

40V Dual N-Channel MOSFETs PDS4810 General.

Key Features

  • 40V,8A,RDS(ON) =18mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.