Datasheet Details
| Part number | PDS4856 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 431.14 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
 PDS4856 Datasheet
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| Part number | PDS4856 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 431.14 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
PDS4856 Datasheet
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|
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These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
40V N-Channel MOSFETs PDS4856 General.
| Part Number | Description |
|---|---|
| PDS4806 | Dual N-Channel MOSFETs |
| PDS4810 | Dual N-Channel MOSFETs |
| PDS4701 | N+P Channel MOSFETs |
| PDS4903 | P-Channel MOSFETs |
| PDS4904 | N-Channel MOSFETs |
| PDS4906 | N-Channel MOSFETs |
| PDS4909 | P-Channel MOSFETs |
| PDS4910 | N-Channel MOSFETs |
| PDS4956 | N-Channel MOSFETs |
| PDS04N15 | N-Channel MOSFETs |