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PJF17N80T Datasheet N-Channel MOSFETS

Manufacturer: Potens semiconductor

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Datasheet Details

Part number PJF17N80T
Manufacturer Potens semiconductor
File Size 788.14 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJF17N80T Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

800V N-Channel MOSFETs PJF17N80T General.

Key Features

  • 800V,17A, RDS(ON) =0.35Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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