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PJF17N80T - N-Channel MOSFETS

Potens semiconductor

The PJF17N80T by Potens semiconductor is a N-Channel MOSFETS. Below is the official datasheet preview.

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PJF17N80T N-Channel MOSFETS by Potens semiconductor - Datasheet Preview — Official preview page of the PJF17N80T N-Channel MOSFETS datasheet (Potens semiconductor).

Datasheet Details

Part number	PJF17N80T
Manufacturer	Potens semiconductor
File Size	788.14 KB
Description	N-Channel MOSFETS
Datasheet	PJF17N80T-Potenssemiconductor.pdf
Additional preview pages of the PJF17N80T datasheet.

PJF17N80T Product details

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

800V,17A, RDS(ON) =0.35Ω@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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Published: Aug 23, 2018 |