PJF17N80T mosfets equivalent, n-channel mosfets.
* 800V,17A, RDS(ON) =0.35Ω@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Hi.
TO220F Pin Configuration
D
S D G
G
S
BVDSS 800V
RDSON 0.35
ID 17A
Features
* 800V,17A, RDS(ON) =0.35Ω@VGS.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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