PJF11N65D Description
These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply TO220F D G DS G S BVDSS 650V RDSON 0.38 ID 11A.
PJF11N65D Key Features
- 11A,650V, RDS(ON) =0.38Ω@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available