Datasheet Details
| Part number | PJP15N65D |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 727.12 KB |
| Description | N-Channel MOSFETS |
| Download | PJP15N65D Download (PDF) |
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Overview: 650V N-Channel MOSFETS PJP15N65D General.
| Part number | PJP15N65D |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 727.12 KB |
| Description | N-Channel MOSFETS |
| Download | PJP15N65D Download (PDF) |
|
|
|
These N-Channel enhancement mode power field effect transistors are using Super Junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply TO220 Pin Configuration D G BVDSS 650V RDSON 0.29 ID 15A
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| Part Number | Description |
|---|---|
| PJP20N65D | N-Channel MOSFETS |