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PJP20N65D - N-Channel MOSFETS

Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20A,650V, RDS(ON) =0.2Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PJP20N65D

Datasheet Details

Part number PJP20N65D
Manufacturer Potens semiconductor
File Size 716.89 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJP20N65D Datasheet
Additional preview pages of the PJP20N65D datasheet.

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Full PDF Text Transcription

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650V N-Channel MOSFETS PJP20N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220 Pin Configuration D G BVDSS RDSON ID 650V 0.2 20A Features  20A,650V, RDS(ON) =0.
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