Datasheet Details
| Part number | PFP3205 |
|---|---|
| Manufacturer | PowerGate |
| File Size | 536.17 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
 PFP3205 Datasheet
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| Part number | PFP3205 |
|---|---|
| Manufacturer | PowerGate |
| File Size | 536.17 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
PFP3205 Datasheet
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This power MOSFET has an excellent avalanche characteristics, and low RDS(ON) and low gate charge as well by using PowerGate semiconductor’s own and specialized design technology, These are well suited for high stress system such like motor control, amplifier, UPS, or DC to DC converter Which needs lower gate charge and on-resistance.
1 3 Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed (note 1) Gate to Source Voltage Single pulsed Avalanche Energy (note 2) Repetitive Avalanche Energy (note 1) Peak diode Recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
PFP3205 55 110 80 390 ±20 2900 20 5.0 200 1.34 -55 ~ + 175 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC Thermal characteristics Symbol Rthjc Rthcs Rthja Parameter Thermal resistance, Junction to case Thermal resistance, Case to Sink Thermal resistance, Junction to ambient Typ.
PFP3205 High ruggedness MOSFET RDS(ON) (Typ 0.0068Ω)@VGS=10V Gate Charge (Typ 65nC) Improved dv/dt Capability Fast Switching 100% Avalanche Tested N-channel Power MOSFET TO-220 12 3 1.
Gate 2.
Drain 3.
| Part Number | Description |
|---|---|
| PFP4N60 | N-channel MOSFET |
| PFP7N60 | N-channel MOSFET |