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Power Innovations Limited

BD900 Datasheet Preview

BD900 Datasheet

PNP Transistor

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Copyright © 1997, Power Innovations Limited, UK
BD896, BD898, BD900, BD902
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
q Designed for Complementary Use with
BD895, BD897, BD899 and BD901
q 70 W at 25°C Case Temperature
q 8 A Continuous Collector Current
q Minimum hFE of 750 at 3V, 3A
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating free-air temperature range
Operating junction temperature range
Storage temperature range
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
TA
Tj
Tstg
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-8
-0.3
70
2
-65 to +150
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
W
W
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




Power Innovations Limited

BD900 Datasheet Preview

BD900 Datasheet

PNP Transistor

No Preview Available !

BD896, BD898, BD900, BD902
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VCE(sat)
VBE(on)
VEC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IC = -100 mA IB = 0
VCE = -30 V
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VEB = -5 V
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
VCE = -3 V IC = -3 A
IB = -12 mA IC = -3 A
VCE = -3 V IC = -3 A
IE = -8 A IB = 0
(see Note 3)
TC = 100°C
TC = 100°C
TC = 100°C
TC = 100°C
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
-45
-60
-80
-100
750
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-2
-2
-2
-2
-2
-2.5
-2.5
-3.5
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.79 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff Turn-off time
IC = -3 A
VBE(off) = 3.5 V
IB(on) = -12 mA
RL = 10
IB(off) = 12 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1 µs
5 µs
PRODUCT INFORMATION
2


Part Number BD900
Description PNP Transistor
Maker Power Innovations Limited
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BD900 Datasheet PDF






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