BD900 - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) High DC Current Gain : hFE= 750(Min) @IC= -3A Collector Power Dissipation- : PC= 70W@ TC= 25℃ 8 A Continuous Collector Current Complement to Type BD899 Minimum Lot-to-Lot variations for robust device performance

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BD900 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BD900
Manufacturer	Inchange Semiconductor
File Size	208.42 KB
Description	PNP Transistor
Datasheet	BD900 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
BD900A	PNP Transistor
BD901	NPN Transistor
BD902	PNP Transistor
BD905	Silicon NPN Power Transistor
BD906	Silicon PNP Power Transistor

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isc Silicon PNP Darlington Power Transistor BD900 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD899 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current-Continuous -0.