BD900 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation-.
| Part number | BD900 |
|---|---|
| Datasheet | BD900 Datasheet PDF (Download) |
| File Size | 208.42 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation-.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD900 | PNP Transistor | Power Innovations Limited |
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BD900 | SILICON POWER TRANSISTOR | SavantIC |
| BD900 | Silicon NPN Power Transistors | Comset Semiconductors |