Download BD906 Datasheet PDF
Inchange Semiconductor
BD906
BD906 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - DC Current Gain - : h FE = 40(Min.)@ IC= -0.5A - Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) - plement to Type BD905 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -15 Collector Current-Peak -20 Base Current -5 Collector Power Dissipation @ TC=25℃ Junction Temperature Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃...