BD906 - Silicon PNP Power Transistor

Inchange Semiconductor

General Description

DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) Complement to Type BD905 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power ampl

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BD906 silicon pnp power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BD906
Manufacturer	Inchange Semiconductor
File Size	213.71 KB
Description	Silicon PNP Power Transistor
Datasheet	BD906 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
BD900	PNP Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) ·Complement to Type BD905 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.