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SEMICONDUCTORS
BD909 – BD911
SILICON POWER TRANSISTORS
The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching applications. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCBO VCEO VEBO IC IE IB Pt Tj Tstg
Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Power Dissipation Junction Temperature Storage Temperature range IE = 0 IB = 0 IC = 0
Value
BD909 80 80 BD911 100 100
Unit
V V V A A A W °C
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5 15 15 5 90 150 -65 to 150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS Symbol
RthJ-mb
Ratings
From junction to mounting base
Value
1.
BD909 Datasheet
