BD909 - Silicon NPN Power Transistors

Inchange Semiconductor

General Description

DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) Complement to Type BD910 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplif

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Datasheet Details

Part number	BD909
Manufacturer	Inchange Semiconductor
File Size	210.89 KB
Description	Silicon NPN Power Transistors
Datasheet	BD909 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Type BD910 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.