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BD909 - Silicon NPN Power Transistors

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Part number BD909
Manufacturer Inchange Semiconductor
File Size 210.89 KB
Description Silicon NPN Power Transistors
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Description

DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) Complement to Type BD910 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 5 IC C

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