BD909 Datasheet and Specifications PDF

The BD909 is a Silicon NPN Power Transistors.

Key Specifications Powered by Octopart

PackageTO-220-3
Mount TypeThrough Hole
Pins3
Max Operating Temp150 °C
Min Operating Temp-65 °C

BD909 Datasheet

BD909 Datasheet (Inchange Semiconductor)

Inchange Semiconductor

BD909 Datasheet Preview

·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Type BD910 ·Minimum Lot-to-Lot variations for robust device performance and re.

CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A VBE(sat) Base-Emitter Saturation V.

BD909 Datasheet (STMicroelectronics)

STMicroelectronics

BD909 Datasheet Preview

The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PN.

CTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 oC for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB = 5 V I C = 100 mA for BD909/910 for BD911/912 I B =.

BD909 Datasheet (Comset Semiconductors)

Comset Semiconductors

BD909 Datasheet Preview

SEMICONDUCTORS BD909 – BD911 SILICON POWER TRANSISTORS The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switc.

st Condition(s) Min Typ Max ICBO Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Sustaining Voltage (*) Collector-Emitter saturation Voltage (*) Base-Emitter Saturation Voltage (*) Base-Emitter Voltage (*) DC Current Gain (*) DC Current Gain (*) DC Current .

BD909 Datasheet (SGS-THOMSON)

SGS-THOMSON

BD909 Datasheet Preview

The BD707, BD709, and BD711 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in power linear and switching applications. The complementary PNP types a.

hj-ca se Thermal Resistance Junction-case Max 1. 67 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol ICBO Parameter Collector Cut-off Current (IE = 0) ICEO Collector Cut-off Current (IB = 0) IEBO Emitter Cut- off Current (IC = 0) VCEO(sus)∗ Collector-Emitt.

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