BD900A Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Collector Power Dissipation-.
| Part number | BD900A |
|---|---|
| Download | BD900A Datasheet (PDF) |
| File Size | 208.42 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Power Innovations Limited |
BD900A | PNP Transistor |
SavantIC |
BD900A | SILICON POWER TRANSISTOR |
Power Innovations Limited |
BD900 | PNP Transistor |
SavantIC |
BD900 | SILICON POWER TRANSISTOR |
| BD900 | Silicon NPN Power Transistors |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Collector Power Dissipation-.