BD900A - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) High DC Current Gain : hFE= 750(Min) @IC= -4A Collector Power Dissipation- : PC= 70W@ TC= 25℃ 8 A Continuous Collector Current Complement to Type BD899A Minimum Lot-to-Lot variations for robust device performanc

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BD900A pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BD900A
Manufacturer	Inchange Semiconductor
File Size	208.42 KB
Description	PNP Transistor
Datasheet	BD900A Datasheet

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isc Silicon PNP Darlington Power Transistor BD900A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD899A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current-Continuous -0.