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Power Innovations Limited

TIP36B Datasheet Preview

TIP36B Datasheet

PNP SILICON POWER TRANSISTORS

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Copyright © 1997, Power Innovations Limited, UK
TIP36, TIP36A, TIP36B, TIP36C
PNP SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
q Designed for Complementary Use with the
TIP35 Series
q 125 W at 25°C Case Temperature
q 25 A Continuous Collector Current
q 40 A Peak Collector Current
q Customer-Specified Selections Available
B
C
E
SOT-93 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
-80
-100
-120
-140
-40
-60
-80
-100
-5
-25
-40
-5
125
3.5
90
-65 to +150
-65 to +150
250
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = -20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




Power Innovations Limited

TIP36B Datasheet Preview

TIP36B Datasheet

PNP SILICON POWER TRANSISTORS

No Preview Available !

TIP36, TIP36A, TIP36B, TIP36C
PNP SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICES
Collector-emitter
cut-off current
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = -30 mA
(see Note 5)
VCE = -80 V
VCE = -100 V
VCE = -120 V
VCE = -140 V
VCE = -30 V
VCE = -60 V
VEB = -5 V
VCE = -4 V
VCE = -4 V
IB = -1.5 A
IB = -5 A
VCE = -4 V
VCE = -4 V
VCE = -10 V
VCE = -10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = -1.5 A
IC = -15 A
IC = -15 A
IC = -25 A
IC = -15 A
IC = -25 A
IC = -1 A
IC = -1 A
TIP36
TIP36A
TIP36B
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
TIP36/36A
TIP36B/36C
-40
-60
-80
-100
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
25
10
25
3
-0.7
-0.7
-0.7
-0.7
-1
-1
-1
50
-1.8
-4
-2
-4
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1 °C/W
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff Turn-off time
IC = -15 A
VBE(off) = 4.15 V
IB(on) = -1.5 A
RL = 2
IB(off) = 1.5 A
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1.1 µs
0.8 µs
PRODUCT INFORMATION
2


Part Number TIP36B
Description PNP SILICON POWER TRANSISTORS
Maker Power Innovations Limited
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TIP36B Datasheet PDF





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