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LXA16T600C Datasheet Preview

LXA16T600C Datasheet

16A X-Series Common-Cathode Diode

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LXA16T600C
QspeedFamily
600 V, 16 A X-Series Common-Cathode Diode
Product Summary
IF(AVG) per diode
VRRM
QRR (Typ at 125 °C)
IRRM (Typ at 125 °C)
Softness tb/ta (Typ at 125 °C)
8
600
82
3.5
0.55
A
V
nC
A
Pin Assignment
TO-220AB
A1
K
A2
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
General Description
This device has the lowest QRR of any 600V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
Power Factor Correction (PFC) Boost Diode
Motor drive circuits
DC-AC inverters
Features
Low QRR, Low IRRM, Low tRR
High dIF/dt capable (1000A/µs)
Soft recovery
Benefits
Increases efficiency
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol Parameter
VRRM
Peak repetitive reverse voltage
IF(AVG)
Average forward current
IFSM
IFSM
TJ
TSTG
PD
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Power dissipation
Conditions
Per Diode, TJ = 150 °C, TC = 122°C
Per Device, TJ = 150 °C, TC = 122°C
60 Hz, ½ cycle
½ cycle of t = 28 µs Sinusoid, TC = 25 °C
Leads at 1.6mm from case, 10 sec
TC = 25 °C
Rating
600
8
16
60
350
150
–55 to 150
300
83
Units
V
A
A
A
A
°C
°C
°C
W
Thermal Resistance
Symbol Resistance from:
RθJA Junction to ambient
RθJC
Junction to case
Conditions
TO-220AB
Per Diode
Per Device
Rating
62
1.5
0.8
Units
°C/W
°C/W
°C/W
www.powerint.com
January 2011




Power Integrations

LXA16T600C Datasheet Preview

LXA16T600C Datasheet

16A X-Series Common-Cathode Diode

No Preview Available !

LXA16T600C
Electrical Specifications at TJ= 25 °C (unless otherwise specified)
Symbol Parameter
Conditions
Min Typ Max
DC Characteristics per diode
IR Reverse current per diode VR = 600 V, TJ = 25 °C
VR = 600 V, TJ = 125 °C
VF Forward voltage per diode IF = 8 A, TJ = 25 °C
IF = 8 A, TJ = 150 °C
CJ Junction capacitance per VR = 10 V, 1 MHz
diode
- - 250
- 0.85 -
- 2.35 2.94
- 2.1 -
- 40 -
Dynamic Characteristics per diode
tRR
Reverse recovery time,
dIF/dt =200 A/µs TJ=25 °C
- 21.5 -
per diode
VR=400, IF=8 A TJ=125 °C
-
33
-
QRR Reverse recovery charge, dIF/dt =200 A/µs TJ=25 °C
- 31 48
per diode
VR=400, IF=8 A TJ =125 °C
-
82
-
IRRM Maximum reverse
dIF/dt =200 A/µs TJ =25 °C - 2.2 2.8
recovery current, per
VR=400, IF=8 A TJ=125 °C
-
3.5
-
diode
S
Softness per diode= tb
ta
dIF/dt =200 A/µs TJ =25 °C
VR=400, IF=8 A TJ=125 °C
-
-
0.74
0.55
-
-
Units
µA
mA
V
V
pF
ns
ns
nC
nC
A
A
Note to component engineers: X-Series diodes employ Schottky technologies in their design and construction.
Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups.
(For further details, see application note AN-300.)
VR
IF
0
dIF/dt
tRR
ta tb
IRRM
0.1xIRRM
Pulse generator
L1
15V
+ Rg
Q1
Figure 1. Reverse Recovery Definitions
Figure 2. Reverse Recovery Test Circuit
D1
DUT
www.powerint.com
2
Rev 1.1 01/11


Part Number LXA16T600C
Description 16A X-Series Common-Cathode Diode
Maker Power Integrations
Total Page 7 Pages
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