Datasheet Details
| Part number | IRFP048N |
|---|---|
| Manufacturer | Power MOSFET |
| File Size | 117.24 KB |
| Description | Power MOSFET |
| Datasheet | IRFP048N_PowerMOSFET.pdf |
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Overview: PD - 9.1409A IRFP048N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.
| Part number | IRFP048N |
|---|---|
| Manufacturer | Power MOSFET |
| File Size | 117.24 KB |
| Description | Power MOSFET |
| Datasheet | IRFP048N_PowerMOSFET.pdf |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices.
Compare IRFP048N distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFP048N | N-Channel MOSFET | INCHANGE |
 |
IRFP048NPbF | Power MOSFET | International Rectifier |
 |
IRFP048 | Power MOSFET | Vishay |
|
IRFP048 | N-Channel MOSFET | INCHANGE |
|
IRFP048PbF | Power MOSFET | International Rectifier |
| Part Number | Description |
|---|---|
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