IRFP048N mosfet equivalent, power mosfet.
r>* Low Leakage Inductance Current Transformer
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*
+
RG
*
*
*
* dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Facto.
The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .
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