(di/dt)cr
TVJ = TVJM repetitive, IT = 500 A f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 0.5 A, non repetitive, IT = ITAVM diG/dt = 0.5 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 µs tP = 500 µs.
International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins
(dv/dt)cr PGM PGAV VRGM TVJ.
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Thyristor Modules Thyristor/Diode Modules
Preliminary Data Sheet
PSKT 161 PSKH 161
ITRMS ITAVM VRRM
= 2x 300 A = 2x 165 A = 2000-2200 V
VRSM VDSM V 2100 2300
VRRM VDRM V 2000 2200
Type Version 1 PSKT 161/20io1 PSKT 161/22io1 Version 1 PSKH 161/20io1 PSKH 161/22io1
1
2
3
6
7 5
4
3
6 7 1
5 4 2
Symbol ITRMS ITAVM ITSM
Test Conditions TVJ = TVJM TC = 85°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
Maximum Ratings 300 165 6000 6400 5250 5600 180000 170000 137000 128000 150 500 1000 120 60 8 10 -40 ...125 125 -40 ...
PSKH161 Datasheet
