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Powersem GmbH

PSHI06 Datasheet Preview

PSHI06 Datasheet

IGBT Module H-Bridge Configuration

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IGBT Module PSHI 100/06*
H-Bridge Configuration
Preliminary Data Sheet
Short Circuit SOA Capability
Square RBSOA
F10
A1
K10
K13
H13
ECO-PACTM 2
IC25 = 69 A
VCES = 600 V
V =CE(sat)typ. 2.3 V
IGBTs
S18
N9 P18
NTC
PSHI 100/06*
*NTC optional
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
VGE = ±15 V; RG = 22 ; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = VCES; VGE = ±15 V; RG = 22 ; TVJ = 125°C
non-repetitive
69
48
100
VCES
10
A
A
A
µs
TC = 25°C
208 W
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
RthJC
RthJH
IC = 75 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 1 mA; VGE = VCE
VCE = VCES;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 40 A
VGE = 15/0 V; RG = 22
VCE = 25 V; VGE = 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
2.3 2.8 V
2.8 V
4.5 6.5 V
0.8 mA
4.4 mA
100 nA
50 ns
55 ns
300 ns
30 ns
1.8 mJ
1.4 mJ
2.8 nF
0.6 K/W
1.2 K/W
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
Features
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Isolation voltage 3000 V
UL registered, E 148688
Advantages
space and weight savings
reduced protection circuits
package designed for wave
soldering
High power density
Easy to mount with two screws
Typical Applications
motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20




Powersem GmbH

PSHI06 Datasheet Preview

PSHI06 Datasheet

IGBT Module H-Bridge Configuration

No Preview Available !

PSHI 100/06
Reverse diodes (FRED)
Symbol
Conditions
IF25 TC = 25°C
IF80 TC = 80°C
Maximum Ratings
56 A
35 A
Symbol
Conditions
VF IF = 40 A; TVJ = 25°C
TVJ = 125°C
IRM IF = 30 A; diF/dt = 500 A/µs; TVJ = 125°C
trr VR = 300 V; VGE = 0 V
RthJC
RthJH
with heatsink compound (0.42 K/m.K; 50 µm)
Temperature Sensor NTC
Symbol
Conditions
R25
B25/50
Module
T = 25°C
Characteristic Values
min. typ. max.
2.32 2.59 V
1.58 V
15 A
70 ns
1.3 K/W
2.6 K/W
Characteristic Values
min. typ. max.
455 470
3474
485 k
K
Symbol
TVJ
Tstg
VISOL
Md
a
Conditions
IISOL 1 mA; 50/60 Hz
Mounting torque (M4)
Max. allowable acceleration
Maximum Ratings
-40...+150
-40...+150
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s2
Symbol
dS
dA
Weight
Conditions
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
Characteristic Values
min. typ. max.
11.2 mm
11.2 mm
24 g
Package style and outline
Dimensions in mm (1mm = 0.0394“)
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20


Part Number PSHI06
Description IGBT Module H-Bridge Configuration
Maker Powersem GmbH
Total Page 4 Pages
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