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PSTG50HST12 - Powerline N-Channel Trench Gate-IGBT

Features

  • Package with DCB ceramic base plate and soldering pins for PCB mounting.
  • Isolation voltage over 3000 V∼.
  • Trench Gate.
  • Enhancement Mode N-Channel Device.
  • Non Punch through Structure.
  • High Switching Speed.
  • Low On-state Saturation Voltage.
  • High Input Impedance Simplifies Gate Drive.
  • Latch-Free Operation.
  • Fully Short Circuit Rated to 10 µs.
  • Wide RBSOA.

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Datasheet preview – PSTG50HST12

Datasheet Details

Part number PSTG50HST12
Manufacturer Powersem GmbH
File Size 162.57 KB
Description Powerline N-Channel Trench Gate-IGBT
Datasheet download datasheet PSTG50HST12 Datasheet
Additional preview pages of the PSTG50HST12 datasheet.
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Full PDF Text Transcription

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ECO-PACTM 1 Powerline N-Channel Trench GateIGBT Module PSTG 50HST12 VCES VCE(sat) IC25 IC75 ICM tSC I N H M Preliminary Data Sheet = 1200 V = 1.9 V = 72 A = 50 A = 150 A = 10 µs A B G Symbol VCES VGES IC25 IC75 ICM Ptot tSC TVJ Tstg RthJC RthJC VISOL MD dS dA Weight Test Conditions TVJ = 25°C to 150°C continous TC = 25°C; TC = 75°C; TC = 75°C; TC = 75°C VCE = 80 VCES, RG = 10 Ω, VGE = ±15 V TVJ = 125°C, non-repetitive Maximum Ratings 1200 ±20 72 50 150 90 10 -40...+150 -40...
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