PSTG75HST12 Datasheet | Powersem GmbH

Features - Package with DCB ceramic base plate and soldering pins for PCB mounting - Isolation voltage over 3000 V∼ - Trench Gate - Enhancement Mode N-Channel Device - Non Punch through Structure - High Switching Speed - Low On-state Saturation Voltage - High Input Impedance Simplifies Gate Drive - Latch-Free Operation - Fully Short Circuit Rated to 10 µs - Wide RBSOA Applications - High Frequency Inverters - Motor Control - Switch Mode Power Supplies - High Frequency Welding - UPS Systems - PWM Drives Preliminary Data Sheet = 1200 V = 1.9 V = 109 A = 75 A = 225 A = 10 µs Symbol VCES VGES IC25 IC75 ICM Ptot t SC TVJ Tstg Rth JC Rth JC VISOL MD d S d A Weight Test Conditions TVJ = 25°C to 150°C continous TC = 25°C; TC = 75°C; TC = 75°C; TC = 75°C VCE = 80 VCES, RG = 10 Ω, VGE = ±15 V TVJ = 125°C, non-repetitive Maximum Ratings 1200 ±20 109 75 225 136 10 -40...+150 -40...+125 V V A A A W µs °C °C K/W K/W V~ Nm mm mm g IGBT-per devices Diode-per devices IISOL ≤ 1 m A, 50/60 Hz, t= 1 min Mounting torque (M4) typ. Creepage distance on surface Strike distance through air typ. 0.55 1.33 3000 1.5-1.8 min. 11.2 4.0 16 .. Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. POWERSEM Gmb H, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSTG 75HST12 Symbol ICES IGES VCE(sat) VGE(th) td(on) tr td(off) tf Eon Eoff Cies Coes Cies VFM trr IRRM Test...