PDNM8P60V5 Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness. Dual N-Channel MOSFET per line@25℃( unless otherwise specified) PDNM8P60V5 Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic...