PDNM8P60V5 Overview
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 60 MOSFET Product Summary RDS(on)(mΩ) ID(A) 32@ VGS=4.5V 5 D1 D1 D2 D2 8 76 5 PE60D05S YYWW 1 23 4 S1 G1 S2 G2 Top View(SOP-8) PDNM8P60V5 Dual N-Channel MOSFET SOP-8L D1 D2 G1 G2 S1 S2 Internal Structure Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous（TC=100℃） Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Parameter Symbol VDS VGS ID ID（100℃） IDM PD TJ, TSTG Symbol RθJA Maximum 60 ±20 5 3.5 24 2 -55 to 150 Maximum 62.5 Units V V A A A W ℃ Units ℃/W Rev.06.0 1 Dual N-Channel MOSFET PDNM8P60V5 Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics (Note 3) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 3) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-On Fall Time Drain-Source Diode Characteristics Drain Forward Voltage(Note 2) Drain Forward Current(Note 1) Forward Turn-On Time Symbol Conditions Min.
