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Description
PNM523T60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.
PNM523T60V02 N-Channel MOSFET
D（3）
VDS(V) 60
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
2.0@ VGS=10V
0.5 to 1.3
ID(A) 0.18
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Delay Time Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
VDSS IDSS IGSS VGS(th)
RDS(ON)
ID =10μA,VGS=0V VDS =40V,VGS=0V VDS =0V,VGS=±20V VDS =VGS, ID =250μA VGS=5V, ID =0.
PNM523T60V02 Datasheet
