PNM6N20V10E Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness. 145 Units V V A A W KV ℃ Units ℃/W Rev.06.2 1 .prisemi. Pulse width limited by maximum junction temperature.
PNM6N20V10E is N-Channel MOSFET manufactured by Prisemi.
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|---|---|
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| PNM3FD20V1E | N-Channel MOSFET |
| PNM3FD20V1ELN | N-Channel MOSFET |
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness. 145 Units V V A A W KV ℃ Units ℃/W Rev.06.2 1 .prisemi. Pulse width limited by maximum junction temperature.